IGBT 20-40/1200V ME ΔΙΟΔΟ IHW20N120R3

Maximum Operating Temperature +175 °C
Length 16.13mm
Transistor Configuration Single
Brand Infineon
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 40 A
Package Type TO-247
Maximum Power Dissipation 310 W
Energy Rating 1.65mJ
Mounting Type Through Hole
Minimum Operating Temperature -40 °C
Width 5.21mm
Height 21.1mm
Pin Count 3
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Gate Emitter Voltage ±20V
Channel Type N
Gate Capacitance 1503pF