FQP27P06 P-channel MOSFET, 27 A, 60 V QFET, 3-Pin TO-220AB

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 10.1mm
Transistor Configuration Single
Typical Turn-On Delay Time 18 ns
Brand ON Semiconductor
Typical Turn-Off Delay Time 30 ns
Maximum Continuous Drain Current 27 A
Package Type TO-220AB
Maximum Power Dissipation 120 W
Series QFET
Mounting Type Through Hole
Minimum Operating Temperature -55 °C
Width 4.7mm
Maximum Gate Threshold Voltage 4V
Height 9.4mm
Minimum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 70 mΩ
Maximum Drain Source Voltage 60 V
Pin Count 3
Dimensions 10.1 x 4.7 x 9.4mm
Category Power MOSFET
Typical Gate Charge @ Vgs 33 nC @ 10 V
Transistor Material Si
Channel Mode Enhancement
Typical Input Capacitance @ Vds 1100 pF @ 25 V
Channel Type P
Maximum Gate Source Voltage -25 V, +25 V