Τρανζίστορ RFP50N06 N-channel Mosfet 50 A, 60 V

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 10.67mm
Transistor Configuration Single Typical Turn-On Delay Time 12 ns
Brand Fairchild Semiconductor
Typical Turn-Off Delay Time 37 ns
Maximum Continuous Drain Current 50

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 10.67mm
Transistor Configuration Single Typical Turn-On Delay Time 12 ns
Brand Fairchild Semiconductor
Typical Turn-Off Delay Time 37 ns
Maximum Continuous Drain Current 50 A
Package Type TO-220AB
Maximum Power Dissipation 131 W
Series MegaFET
Mounting Type Through Hole
Minimum Operating Temperature -55 °C
Width 4.83mm
Minimum Gate Threshold Voltage 2V
Height 9.4mm
Maximum Drain Source Resistance 22 mΩ
Maximum Drain Source Voltage 60 V
Pin Count 3
Dimensions 10.67 x 4.83 x 9.4mm
Category Power MOSFET
Typical Gate Charge @ Vgs 125 nC @ 20 V
Transistor Material Si
Channel Mode Enhancement
Typical Input Capacitance @ Vds 2020 pF@ 25 V
Channel Type N
Maximum Gate Source Voltage ±20 V