Τρανζίστορ N-channel Mosfet 28 A 55 V IRLR2705TRPBF

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 6.73mm
Transistor Configuration Single
Typical Turn-On Delay Time 8.9 ns
Brand Infineon
Typical Turn-Off Delay Time 21 ns
Maximum Continuous Drain Current 28 A
Package Type

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 6.73mm
Transistor Configuration Single
Typical Turn-On Delay Time 8.9 ns
Brand Infineon
Typical Turn-Off Delay Time 21 ns
Maximum Continuous Drain Current 28 A
Package Type DPAK
Maximum Power Dissipation 68 W
Series HEXFET
Mounting Type Surface Mount
Minimum Operating Temperature -55 °C
Width 6.22mm
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Height 2.39mm
Maximum Drain Source Resistance 40 mΩ
Maximum Drain Source Voltage 55 V
Pin Count 3
Dimensions 6.73 x 6.22 x 2.39mm
Category Power MOSFET
Typical Gate Charge @ Vgs 25 nC @ 5 V
Transistor Material Si
Channel Mode Enhancement
Typical Input Capacitance @ Vds 880 pF@ 25 V
Channel Type N
Maximum Gate Source Voltage ±16 V