IPB049NE7N3 G N-channel MOSFET, 80 A, 75 V OptiMOS 3, 3-Pin D2PAK
- Item Code: 530012910020
- Help Code: IPB049NE7N3 G
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Availability:
In Stock
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Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 10.31mm
Transistor Configuration Single
Typical Turn-On Delay Time 14 ns
Brand Infineon
Typical Turn-Off Delay Time 30 ns
Maximum Continuous Drain Current 80 A
Package Type D2PAK (TO-263)
Maximum Power Dissipation 150 W
Series OptiMOS 3
Mounting Type Surface Mount
Minimum Operating Temperature -55 °C
Width 9.45mm
Forward Transconductance 103s
Maximum Gate Threshold Voltage 3.8V
Height 4.57mm
Minimum Gate Threshold Voltage 2.3V
Maximum Drain Source Resistance 4.9 mO
Maximum Drain Source Voltage 75 V
Pin Count 3
TRANZISTOR POWER MOSFET HIPERFET 20A/800V
Help Code: IXFH20N80Q
TRANSISTOR POWER MOSFET HIPERFET 26A/500V
Help Code: IXFH26N50
TRANZISTOR POWER MOSFET HIPERFET 32A/500V
Help Code: IXFH32N50Q
TRANZISTOR POWER MOSFET HIPERFET 40A/300V
Help Code: IXFH40N30
TRANZISTOR POWER MOSFET HIPERFET 6A/1000V
Help Code: IXFH6N100Q
TRANZISTOR POWER MOSFET HIPERFET 100A/100V
Help Code: IXFK100N10
TRANZISTOR POWER MOSFET HIPERFET 100A/250V
Help Code: IXFK100N25
TRANZISTOR POWER MOSFET HIPERFET 24A/1000V
Help Code: IXFK24N100
TRANZISTOR POWER MOSFET HIPERFET 32A/600V
Help Code: IXFK32N60