Transistor N-MOSFET unipolar 100V 9.1A 39W DPAK

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 6.73mm
Transistor Configuration Single
Typical Turn-On Delay Time 4.5 ns
Brand Infineon
Typical Turn-Off Delay Time 32 ns
Maximum Continuous Drain Current 9.4 A
Package Type DPAK (TO-252)
Maximum Power Dissipation 48 W
Series HEXFET
Mounting Type Surface Mount
Minimum Operating Temperature -55 °C
Width 6.22mm
Maximum Gate Threshold Voltage 4V
Height 2.39mm
Minimum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 210 mO
Maximum Drain Source Voltage 100 V
Pin Count 3
Dimensions 6.73 x 6.22 x 2.39mm
Category Power MOSFET
Typical Gate Charge @ Vgs 25 nC @ 10 V
Transistor Material Si
Channel Mode Enhancement
Typical Input Capacitance @ Vds 330 pF @ 25 V
Channel Type N
Maximum Gate Source Voltage -20 V, +20 V